JOURNAL ARTICLE
Resistive random access memory and its applications in storage and nonvolatile logic
Dongbin ZhuYi LiWensheng ShenZheng ZhouLifeng LiuXing Zhang
Year: 2017 Journal: Journal of Semiconductors Vol: 38 (7)Pages: 071002-071002 Publisher: IOP Publishing
Abstract
The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials, switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
Keywords:
Resistive random-access memory Non-volatile memory Data retention Resistive touchscreen Random access memory Random access Computer science Materials science Electrical engineering Optoelectronics Computer hardware Engineering Voltage Computer network
Metrics
31
Cited By
1.72
FWCI (Field Weighted Citation Impact)
135
Refs
0.87
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Advanced Memory and Neural Computing
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ferroelectric and Negative Capacitance Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Transition Metal Oxide Nanomaterials
Physical Sciences → Materials Science → Polymers and Plastics
Related Documents
JOURNAL ARTICLE
(Invited) Resistive Random Access Memory for Storage Class Applications
Journal: ECS Meeting Abstracts Year: 2015 Vol: MA2015-02 (16)Pages: 782-782
JOURNAL ARTICLE
(Invited) Resistive Random Access Memory for Storage Class Applications
Journal: ECS Transactions Year: 2015 Vol: 69 (3)Pages: 47-50
JOURNAL ARTICLE
Transition metal oxide thin films for nonvolatile resistive random access memory applications
Journal: Journal of the Ceramic Society of Japan Year: 2009 Vol: 117 (1369)Pages: 929-934