Towards substrate engineering of graphene–silicon Schottky diode photodetectors

Hakan Selvi; Nawapong Unsuree; E. J. W. Whittaker; Matthew P. Halsall; E.W. Hill; Andrew G. Thomas; Patrick Parkinson; T. J. Echtermeyer

doi:10.1039/c7nr09591k

JOURNAL ARTICLE

Towards substrate engineering of graphene–silicon Schottky diode photodetectors

Hakan Selvi Nawapong Unsuree E. J. W. Whittaker Matthew P. Halsall E.W. Hill Andrew G. Thomas Patrick Parkinson T. J. Echtermeyer

Year: 2018 Journal: Nanoscale Vol: 10 (7)Pages: 3399-3409 Publisher: Royal Society of Chemistry

DOI: 10.1039/c7nr09591k

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Abstract

We present a systematic study of the performance of graphene–silicon Schottky diode photodetectors under varying operating conditions, demonstrating the influence of the substrate and interfacial oxide layer.

Keywords:

Schottky diode Graphene Materials science Photodetector Optoelectronics Substrate (aquarium) Silicon Schottky barrier Diode Layer (electronics) Oxide Nanotechnology

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Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Towards substrate engineering of graphene–silicon Schottky diode photodetectors

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