JOURNAL ARTICLE

Switching characteristics in TiO2/ZnO double layer resistive switching memory device

Praveen JainMohammad SalimUmesh ChandC. Periasamy

Year: 2017 Journal:   Materials Research Express Vol: 4 (6)Pages: 065901-065901   Publisher: IOP Publishing
Keywords:
Materials science Optoelectronics Layer (electronics) Resistive random-access memory Fast switching Nanotechnology Electrical engineering Voltage Engineering

Metrics

14
Cited By
0.79
FWCI (Field Weighted Citation Impact)
23
Refs
0.75
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Advanced Memory and Neural Computing
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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