Switching characteristics in TiO<sub>2</sub>/ZnO double layer resistive switching memory device

Praveen Jain; Mohammad Salim; Umesh Chand; C. Periasamy

doi:10.1088/2053-1591/aa731e

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Switching characteristics in TiO₂/ZnO double layer resistive switching memory device

Praveen Jain Mohammad Salim Umesh Chand C. Periasamy

Year: 2017 Journal: Materials Research Express Vol: 4 (6)Pages: 065901-065901 Publisher: IOP Publishing

DOI: 10.1088/2053-1591/aa731e

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Keywords:

Materials science Optoelectronics Layer (electronics) Resistive random-access memory Fast switching Nanotechnology Electrical engineering Voltage Engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Switching characteristics in TiO₂/ZnO double layer resistive switching memory device

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