Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography

Sung‐Wen Huang Chen; Shengwen Wang; Kuo‐Bin Hong; Yu‐Lin Tsai; An-Jye Tzou; You-Chen Chu; Po-Tsung Lee; Chien‐Chung Lin; Hao‐Chung Kuo

doi:10.1364/cleo_si.2017.sth3n.1

JOURNAL ARTICLE

Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography

Sung‐Wen Huang Chen Shengwen Wang Kuo‐Bin Hong Yu‐Lin Tsai An-Jye Tzou You-Chen Chu Po-Tsung Lee Chien‐Chung Lin Hao‐Chung Kuo

Year: 2017 Journal: Conference on Lasers and Electro-Optics Vol: 73 Pages: STh3N.1-STh3N.1

DOI: 10.1364/cleo_si.2017.sth3n.1

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Abstract

Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer.

Keywords:

Materials science Optoelectronics Light-emitting diode Wafer Diode Wavelength Wide-bandgap semiconductor Nanosphere lithography Lithography Gallium nitride Layer (electronics) Nanotechnology Fabrication

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography

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