Spring E-MRS 2016 Symposium L “Wide bandgap materials for electron devices”

Abstract

Within about two decades, wide bandgap semiconductors like GaN and SiC have emerged as credible candidates for applications in power and high frequency electronics, lighting, harsh environment devices, sensors and actuators. In the present issue of Physica Status Solidi (a), SiC and III-nitrides based-topics on material growth, characterization as well as device process and operation are addressed. The presented themes are not limited to the traditional SiC MOSFETs and AlGaN/GaN HEMTs. In addition, a review article on silicon carbide sensors is presented [Kermany et al] and new material combinations are investigated with ab-initio calculations, as well as within experimental studies, like Graphene integration with III-Nitrides, as reported in a feature article [Giannazzo et al]. The 32 included papers are a selection of the works presented in Spring E-MRS Symposium L “Wide bandgap materials for electron devices” held in Lille, France on May 2016. The aim of this symposium was to discuss the status, the remaining material issues, and new routes in the wide bandgap semiconductors field. Yvon Cordier, Daniel Alquier and Konstantinos Zkentes Guest Editors