Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning

Honghyuk Kim; Jonathan W. Choi; Zachary Lingley; Miles Brodie; Yongkun Sin; T. F. Kuech; Padma Gopalan; L. J. Mawst

doi:10.1016/j.jcrysgro.2017.02.046

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Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning

Honghyuk Kim Jonathan W. Choi Zachary Lingley Miles Brodie Yongkun Sin T. F. Kuech Padma Gopalan L. J. Mawst

Year: 2017 Journal: Journal of Crystal Growth Vol: 465 Pages: 48-54 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2017.02.046

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Keywords:

Materials science Quantum dot Optoelectronics Metalorganic vapour phase epitaxy Lithography Epitaxy Etching (microfabrication) Photolithography Dry etching Nanotechnology Semiconductor Layer (electronics)

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Near-Field Optical Microscopy

Physical Sciences → Engineering → Biomedical Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning

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