Huixia LuoWeiwei XieElizabeth M SeibelR J Cava
The 3-layer rhombohedral (3R) polytype of TaSe2-x Te x is known to display a superconducting transition temperature that is between 6 and 17 times higher than that of the two-layer hexagonal (2H) polytype. The remarkable difference in T c, although clearly associated with a difference in polytype, could have been due to an electronic effect specific to the Te-Se substitution. Here we report that small amounts of Mo or W doping lead to a 2H to 3R polytype transition in Ta1-x Mo x Se2 and Ta1-x W x Se2. The 3R polytype materials are again found to have substantially higher T c (~2 K for Ta0.9W0.1Se2 and Ta0.9Mo0.1Se2) than the 2H material (0.15 K), eliminating the possibility that any special characteristics of the Te/Se substitution are responsible for the dramatic difference in T c. We infer that a three-layer stacking sequence is strongly preferred for superconductivity over a two-layer stacking sequence in the TaSe2 system.
Richard D. WestoverGavin MitchsonJeffrey DittoDavid C. Johnson
Huixia LuoWeiwei XieJing TaoI. PletikosićT. VallaGirija SahasrabudheGavin B. OsterhoudtErin SuttonKenneth S. BurchElizabeth M. SeibelJason W. KrizanYimei ZhuR. J. Cava
Antje MrotzekLykourgos IordanidisMercouri G. Kanatzidis
Daniela DelgadoPaulina Valencia-GálvezSilvana MorisAntonio Galdámez