J. GasparHélder FonsecaElvira PazMarco MartinsJoão ValadeiroSusana CardosoRicardo FerreiraP. P. Freitas
This paper reports on the integration of magnetic tunnel junction (MTJ) sensing devices with magnetoresistance responses above 150% on flexible substrates. The sensors are integrated in a fabrication process based on polyimide materials, and demonstrate sensitivities up to 250 μV/Oe for bias currents in the 100-μA range. Assessment of the sensors performance is done under controlled mechanical load conditions, and the magnetoresistance is only slightly affected (1% variation) while sensitivity changes by 7.5% when the bending radii reduce down to 5 mm. The results demonstrate the high potential of the MTJ sensors to be used in applications requiring bending and conforming to non-planar geometries, bringing magnetoelectronic technologies to hard-to-reach regions of space.
Rui XuEduardo Sergio Oliveros MataFei ChengOleksandr V. PylypovskyiQihao ZhangProloy T. DasYevhen ZabilaOlha BezsmertnaJun YangXiaotao WangSebastian LehmannLin GuoRené HübnerFabian GanssRan HeRico IllingKornelius NielschDenys Makarov
P. P. FreitasSusana CardosoRicardo FerreiraVerónica C. MartinsAndre F. S. GuedesFilipe A. CardosoJoana LoureiroRita MacedoR. C. ChavesJosé Amaral
Alberto NicoliceaMatthias PelknerMichael MelzerEduardo Sergio Oliveros MataYevhen ZabilaDenys Makarov