Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance

A. Veloso; A. De Keersgieter; P. Matagne; Naoto Horiguchi; Nadine Collaert

doi:10.1016/j.mssp.2016.10.018

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JOURNAL ARTICLE

Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance

A. Veloso A. De Keersgieter P. Matagne Naoto Horiguchi Nadine Collaert

Year: 2016 Journal: Materials Science in Semiconductor Processing Vol: 62 Pages: 2-12 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2016.10.018

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Keywords:

Materials science Parasitic extraction Doping Nanowire Optoelectronics Transistor Nanotechnology Reliability (semiconductor) Engineering physics Electronic engineering Electrical engineering Voltage Engineering Physics

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Topics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

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