Synthesis And Characterization Of Nickel Doped Zinc Oxide Nanoparticles By Sol – Gel Method

Abstract

Zinc Oxide (ZnO) referred to as II – VI semiconductor because Znic belong to the second group and oxygen belongs to the sixth group of the periodic table. As grown ZnO in n – type semiconductor and its n – type conductivity can be controlled by growing it in an oxygen deficient atmosphere or by doping it with group III element like Al, Ga, or In. High quality 3d doped ZnO samples were required to synthesize a functional DMS (diluted magnetic semiconductor) whose magnetic properties were controlled by changing the carrier concentration, which Implies that there was a need to investigate the transport properties of (TM) ion doped ZnO. Hence the optical properties of undoped and TM ion Ni doped ZnO sample had been investigated and the valence state of these doped had been conformed through optical studies. The chemical synthesis of semiconductor nanoparticles from (~1 – 20nm) in diameter with short – range structure were essentially the same as the bulk semiconductor. For characterization of Nickel pure and doped Zinc Oxide . nanopartical we used XRD and FTIR( Fourier transmission infrared) spectroscopy respectively.patterns reveal that the diffraction peaks of pure ZnO and nickel doped ZnO nanoparticles can be indexed to hexagonal wurtzite structure of ZnO which were in good agreement with the standard JCPDS file for ZnO (JCPDS36 – 1451, a = b = 3.249Ǻ, c = 5.206Ǻ). The grow size were calculated from XRD data was found that grain size decrease as Ni concentration increase up to 3% but decease up to 5%. Spectrophotometry investigated the absorption of the different substances between the wavelength limits 190nm and 780nm. The UV measurements pointed out that band gap energy decreases with the increase in Ni concentration by sol – gel method.(FTIR) of powder were recorded in the range 400 – 4000cm.