Jinbao WeiHaigang YangHongguang SunZengjin LinShanhong Xia
ISFET is a potentiometric sensor that is easily adapted for a wide range of chemical, biochemical and biomedical measurements. This article presents an ISFET sensor system-on-chip including the ISFET/REFET (reference FET) pair and ISFET/REFET amplifiers, bias current generator, as well as a reference electrode structure, all integrated on the same chip based on CMOS technology. The sensor chip is fabricated in a standard 0.35/spl mu/m 4-metal and 2-poly layer CMOS process (chartered semiconductor) to which extra post processing steps are added for depositing membranes. The chip operates at 3.3V and the total die area is 5 mm. Finally the performance of the integrated sensor interface circuit is measured and analyzed.
Keiji TsukadaTakuya MaruizumiHiroyuki Miyagi
Francisco López-HuertaR. M. Woo-GarcíaMiguel Lara-CastroJohan J. Estrada-LópezAgustín L. Herrera‐May
Yiyi HongZiwei LiHenan ZhaoSinuo Zhu