Maskless fabrication of GaN-based light-emitting diodes

Benoit Guilhabert; Elliot Richardson; D. Massoubre; Erdan Gu; I. M. Watson; Martin D. Dawson

doi:10.1109/photonics.2010.5699055

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Maskless fabrication of GaN-based light-emitting diodes

Benoit Guilhabert Elliot Richardson D. Massoubre Erdan Gu I. M. Watson Martin D. Dawson

Year: 2010 Pages: 649-650

DOI: 10.1109/photonics.2010.5699055

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Abstract

A versatile maskless process flow was developed to fabricate a GaN-based individually-addressable LED array. This new fabrication approach combines CMOS-controlled micro-LED writing and silver nanoparticle inkjet printing. An array filling factor of 99% was achieved.

Keywords:

Fabrication Materials science Optoelectronics Light-emitting diode Diode Process (computing) Nanotechnology Inkjet printing Inkwell Computer science

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Nanomaterials and Printing Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Maskless fabrication of GaN-based light-emitting diodes

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