Spontaneous and Stimulated Emission from Erbium Doped Silicon Nanocrystals

Abstract

Mathematical model has been developed for erbium luminescence in silicon nanocrystals. Parameters involving the erbium excitation and de-excitation processes have been analyzed. It has been shown that, carrier injections of the order of 10 ¹⁹ /cm ³ in a nanocrystal system can produce sustained lasing action. Laser outputs of the order of milliwatts have been estimated for realistic values of erbium incorporation and excitation conditions.