ZnMgSSe-based blue laser diodes

Hiroyuki Okuyama; Akira Ishibashi

doi:10.1109/cleoe.1994.636477

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ZnMgSSe-based blue laser diodes

Hiroyuki Okuyama Akira Ishibashi

Year: 2005 Journal: Conference on Lasers and Electro-Optics Europe Pages: 270-271

DOI: 10.1109/cleoe.1994.636477

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Abstract

We have demonstrated the feasibility of ZnMgSSe as cladding layers for blue and green laser diodes. The ZnMgSSe, suppressing carrier overflow with its large energy-gap and forming type I heterostructure with Zn(S)Se, enables us to have II-VI semiconductor blue and green lasers fully lattice-matched to GaAs substrates.

Keywords:

Optoelectronics Diode Laser Materials science Heterojunction Semiconductor laser theory Semiconductor Blue laser Cladding (metalworking) Gallium arsenide Band gap Wide-bandgap semiconductor Light-emitting diode Optics Physics Metallurgy

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

ZnMgSSe-based blue laser diodes

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<title>Blue/green laser diodes based on ZnMgSSe</title>