JOURNAL ARTICLE
The structure and dielectric properties of BaZr<inf>x</inf>Ti<inf>1−x</inf>O<inf>3</inf> and BaSn<inf>x</inf>Ti<inf>1−x</inf>O<inf>3</inf> thin films for microwave applications
Abstract
BZT and BTS thin films were fabricated in-situ by RF magnetron on Pt/Ti/Al 2 O 3 substrate (r-cut) in oxygen atmosphere. All films with thickness 400 to 500 nm were crystallized in perovskite phase. For the electrical studies the sandwich capacitors were fabricated based on BZT and BTS films. Tunability at 20 V reached 3.5 with dielectric losses as 0.03 at 2 GHz.
Keywords:
Perovskite (structure) Dielectric Capacitor Substrate (aquarium) Materials science Thin film Analytical Chemistry (journal) Phase (matter) Nuclear chemistry Chemistry Electrical engineering Optoelectronics Crystallography Nanotechnology Voltage Organic chemistry
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Topics
Ferroelectric and Piezoelectric Materials
Physical Sciences → Materials Science → Materials Chemistry
Microwave Dielectric Ceramics Synthesis
Physical Sciences → Engineering → Electrical and Electronic Engineering
Electronic and Structural Properties of Oxides
Physical Sciences → Materials Science → Materials Chemistry
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