Thermoelectric Devices Fabricated Using Amorphous Indium Gallium Zinc Oxide

Abstract

Thermoelectric property of amorphous InGaZnO (a-IGZO) thin film was optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor ( PF ) at 300 K had a maximum value of 82 × 10 −6 W/mK 2 , where the carrier density was 7.7 × 10 19 cm −3 . Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal.