Hermetic Wafer Level Thin Film Packaging for MEMS

Abstract

We report a hermetic thin film packaging on aluminum nitride AlN RF MEMS platforms that is entirely CMOS compatible and wafer level executed. The process flow, including release of multiple free-moving body and encapsulation of the functional structures are demonstrated using 8" wafer level thin film micromachining technology. The encapsulated devices are reported to survive post CMOS assembly processes such as wafer level dicing and flip-chip bonding. Both fabrication outcome and measurement results indicate high possibility in cost effective and footprint reduction in MEMS integration technology.