JOURNAL ARTICLE
LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS
S. L. RumyantsevM. S. ShurR. GaškaM. E. LevinshteĭnM. Asif KhanG. SiminJinwei Yang
Year: 2003 Journal: Frontiers in Electronics Pages: 243-252 Publisher: Frontiers Media
Keywords:
Gallium nitride Infrasound Materials science Noise (video) Optoelectronics Transistor Electrical engineering Electronic engineering Acoustics Computer science Physics Engineering Nanotechnology
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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