Channel Mobility of Gesi Quantum-Well P-Mosfet's

Deepak Kumar Nayak; J.C.S. Woo; J.S. Park; K.L. Wang

doi:10.1109/vlsit.1991.706013

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Channel Mobility of Gesi Quantum-Well P-Mosfet's

Deepak Kumar Nayak J.C.S. Woo J.S. Park K.L. Wang

Year: 1991 Pages: 107-108

DOI: 10.1109/vlsit.1991.706013

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Abstract

The results of channel mobility of a GeSi quantum-well PMOS from 8K to 300 K are presented. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with temperature. The mobility at 8 K is found to be 3 times of that at 25 K. At very low temperature (~ 10K), the transition of channel transconductance with gate voltage from a high to a low value has been clearly observed.

Keywords:

Transconductance PMOS logic Threshold voltage Electron mobility Channel (broadcasting) MOSFET Materials science Optoelectronics Condensed matter physics Electrical engineering Voltage Physics Transistor Engineering

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Channel Mobility of Gesi Quantum-Well P-Mosfet's

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