Top-Gate effects in Dual-Gate Amorphous InGaZnO<sub>4</sub> Thin-Film Transistors

Kazushige Takechi; Shinnosuke Iwamatsu; Toru Yahagi; Yoshiyuki Watanabe; Seiya Kobayashi; Hiroshi Tanabe

doi:10.1149/ma2012-02/42/3044

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Top-Gate effects in Dual-Gate Amorphous InGaZnO₄ Thin-Film Transistors

Kazushige Takechi Shinnosuke Iwamatsu Toru Yahagi Yoshiyuki Watanabe Seiya Kobayashi Hiroshi Tanabe

Year: 2012 Journal: ECS Meeting Abstracts Vol: MA2012-02 (42)Pages: 3044-3044 Publisher: Institute of Physics

DOI: 10.1149/ma2012-02/42/3044

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Abstract

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Keywords:

Materials science Optoelectronics Thin-film transistor Dual (grammatical number) Amorphous solid Nanotechnology Chemistry Crystallography Art

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Top-Gate effects in Dual-Gate Amorphous InGaZnO₄ Thin-Film Transistors

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