BOOK-CHAPTER
Parallel and Perpendicular Transport in a-Si:H,F/a-Si,Ge:H,F Multilayers
Year: 1989 WORLD SCIENTIFIC eBooks Pages: 1099-1113 Publisher: World Scientific
Keywords:
Font Computer science Artificial intelligence
Metrics
0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.38
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Related Documents
BOOK-CHAPTER
GROWTH AND STRUCTURE OF INTERFACES IN a-Si:H/a-SiOx:H AND a-Si:H/a-SiNx:H MULTILAYERS AND HETEROJUNCTIONS
WORLD SCIENTIFIC eBooks Year: 1989 Pages: 977-1002
JOURNAL ARTICLE
INDUCED DEFECTS IN a-Si:H/a-SiNx:H MULTILAYERS BY USE OF A POSITRON ANNIHILATION TECHNIQUE
Guo-Rong CAOSHENG-KANG GUOZhichao WangMIN-KANG TENGChen CaiYin‐Chun Liu
Journal: Modern Physics Letters B Year: 1996 Vol: 10 (01n02)Pages: 1-10
JOURNAL ARTICLE
SiGe NANOCRYSTAL FORMATION IN PECVD GROWN SiOX/Si/Ge/Si/SiOX MULTILAYERS
Journal: Physics, Chemistry and Application of Nanostructures Year: 2009 Pages: 77-80
JOURNAL ARTICLE
STRUCTURAL INSTABILITY OF ANNEALED a-Si/a-Ge NANOSTRUCTURES
C. FrigeriL. NasiMiklós SerényiA. CsíkZ. ERDÉLYDezső L. Beke
Journal: Physics, Chemistry and Application of Nanostructures Year: 2009 Pages: 85-88