Effect of thickness on crystallization behavior in GeSb9 phase change films

Wen Zhang; Dongyan Wu; Yifeng Hu; Airu Jiang; Junshu Xu; Hao Liu; Shupo Bu; Ruihua Shi

doi:10.1007/s10854-016-5460-y

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Effect of thickness on crystallization behavior in GeSb9 phase change films

Wen Zhang Dongyan Wu Yifeng Hu Airu Jiang Junshu Xu Hao Liu Shupo Bu Ruihua Shi

Year: 2016 Journal: Journal of Materials Science Materials in Electronics Vol: 27 (12)Pages: 13148-13153 Publisher: Springer Science+Business Media

DOI: 10.1007/s10854-016-5460-y

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Keywords:

Materials science Nucleation Crystallization Thin film Phase (matter) Composite material Diffraction Surface roughness Phase-change memory Grain size Surface finish Phase change Optics Chemical engineering Layer (electronics) Nanotechnology Thermodynamics Chemistry

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Liquid Crystal Research Advancements

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Effect of thickness on crystallization behavior in GeSb9 phase change films

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