Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures

Ayoub Haj Saı̈d; M. Debbichi; M. Saïd

doi:10.1016/j.ijleo.2016.06.103

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Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures

Ayoub Haj Saı̈d M. Debbichi M. Saïd

Year: 2016 Journal: Optik Vol: 127 (20)Pages: 9212-9221 Publisher: Elsevier BV

DOI: 10.1016/j.ijleo.2016.06.103

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Keywords:

Wurtzite crystal structure Band gap Materials science Density functional theory Direct and indirect band gaps Lattice constant Ultraviolet Condensed matter physics Bowing Wide-bandgap semiconductor Dielectric Electronic band structure Alloy Molecular physics Zinc Optoelectronics Optics Computational chemistry Physics Chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures

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