A 2.45GHz CMOS rectifier for RF energy harvesting

Abstract

This paper presents a novel CMOS rectifier for RF energy harvesting. DC-boosted biasing technique is proposed to enhance power conversion efficiency (PCE) by improving forward peak current, reducing diode forward voltage drop and suppressing reverse leakage current. The main rectification diode is configured as threshold compensated diode during on-state whilst the gate voltage is bounded during off-state to minimize reverse leakage current. The proposed rectifier is implemented in 65nm 6M/1P standard CMOS technology. In simulation, the rectifier achieved PCE of 48.9% with input voltage amplitude of 550mV at 2.45GHz RF input and 2.2kΩ output load.