Electrical properties of anisotype n-TiN/p-Hg3In2Te6 heterojunctions

Abstract

Photosensitive anisotype n-TiN/p-Hg3In2Te6 heterojunctions have been obtained by reactive magnetron sputtering of thin n-type titanium nitride (TiN) films onto single-crystalline plates of p-type Hg3In2Te6. It is established that the obtained heterostructures generate an open-circuit voltage of V oc = 0.52 V and a short-circuit current density of I sc = 0.265 mA/cm2 with a filling factor of FF = 0.39 under illumination at a power density of 80 mW/cm2.