Properties of Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Nb&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt; and Ta&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;/Nb&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt; Stacked and Mixed Films for Gigabit DRAM Capacitor

M Yamato; M. Tanioku; Hikaru Hara; Takamaro Kikkawa

doi:10.7567/ssdm.2008.j-1-6

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JOURNAL ARTICLE

Properties of Al2O3/Nb2O5 and Ta2O5/Nb2O5 Stacked and Mixed Films for Gigabit DRAM Capacitor

M Yamato M. Tanioku Hikaru Hara Takamaro Kikkawa

Year: 2008

DOI: 10.7567/ssdm.2008.j-1-6

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Abstract

2008 International Conference on Solid State Devices and Materials,Properties of Al₂O₃/Nb₂O₅ and Ta₂O₅/Nb₂O₅ Stacked and Mixed Films for Gigabit DRAM Capacitor

Keywords:

Materials science Niobium Analytical Chemistry (journal) Crystallography Metallurgy Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Properties of Al<sub>2</sub>O<sub>3</sub>/Nb<sub>2</sub>O<sub>5</sub> and Ta<sub>2</sub>O<sub>5</sub>/Nb<sub>2</sub>O<sub>5</sub> Stacked and Mixed Films for Gigabit DRAM Capacitor

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