Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films

Abstract

In this work mechanism and kinetics of crystallization for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated.Possible data processing and storage times of the PCM cell were estimated.It was shown that PCM cell based on Ge 2 Sb 2 Te 5 +0.5 wt.% Bi have minimum data processing and maximum data storage times in comparison with the other investigated materials.