Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors

Abstract

It is found that ultrathin poly(3-hexylthiophene) (P3HT) film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0×10−2 cm2/Vcenterdots than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.