Suspended single-walled carbon-nanotube field-effect transistor for gas sensing application

Abstract

We investigate the pressure dependence of transfer characteristics of suspended single-walled carbon-nanotube field-effect transistors. We find that the gate bias around the charge neutral point with low drain current is appropriate for gas sensing application, while the high gate bias condition with high drain current that induces Joule heating in the suspended region for the desorption of the adsorbed molecules is preferable for the vacuum gauge application based on the heat exchange surrounding gas molecules, where the temperature at the suspended channel is investigated based on the simple one-dimensional heat transport model. We also revealed that the pressure dependence of the channel conductance at the gate bias around the charge neutral point can be explained by the Langmuir isotherm.