Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and MOS Tunneling Current of Ultrathin SiO2 Films

Hisashi Fukuda; Tomo Ueno; Hiroshi Kawarada; Iwao Ohdomari

doi:10.1016/b978-0-444-81889-8.50040-7

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Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and MOS Tunneling Current of Ultrathin SiO2 Films

Hisashi Fukuda Tomo Ueno Hiroshi Kawarada Iwao Ohdomari

Year: 1994 Elsevier eBooks Pages: 211-216 Publisher: Elsevier BV

DOI: 10.1016/b978-0-444-81889-8.50040-7

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Keywords:

Deuterium Annealing (glass) Materials science Hydrogen Oxide Quantum tunnelling Analytical Chemistry (journal) Optoelectronics Condensed matter physics Atomic physics Chemistry Composite material Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and MOS Tunneling Current of Ultrathin SiO2 Films

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