Electron Transport through Thin SiO₂ Films Containing Si Nanoclusters

Abstract

The electron transport mechanisms through nanocomposite SiO 2 (Si) films containing Si nanoclusters into dielectric SiO 2 matrix have been investigated. SiO 2 (Si) films were obtained by oxide assisted growth. At the first stage the SiO x films with different content of excess Si were deposited by LP CVD method. Second stage includes high temperature (T=1100 C) annealing of SiO x films that promotes formation of Si nanocrystals. Current transport through SiO 2 (Si) films were studied in temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends as on voltage and temperature. The Mott’s conductivity caused by traps near Fermi level was revealed in low-voltage range for all temperatures. At increasing the voltage the SCLC conductivity is observed for films with higher content of excess silicon while in case low content of Si the Pool-Frenkel mechanism dominates. The further increase in voltage results in a double carrier injection.