JOURNAL ARTICLE

Thin-film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

Mateusz MądzikE. ElangovanRaquel FloresJaime Viegas

Year: 2016 Journal:   MRS Advances Vol: 1 (4)Pages: 281-285   Publisher: Springer Science+Business Media
Keywords:
Materials science Thin-film transistor Optoelectronics Wafer Threshold voltage Oxide Indium Electrode Doping Molybdenum Layer (electronics) Silicon Transistor Analytical Chemistry (journal) Nanotechnology Voltage Electrical engineering Metallurgy

Metrics

2
Cited By
0.32
FWCI (Field Weighted Citation Impact)
5
Refs
0.65
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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