Thin-film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

Mateusz Mądzik; E. Elangovan; Raquel Flores; Jaime Viegas

doi:10.1557/adv.2016.67

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Thin-film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

Mateusz Mądzik E. Elangovan Raquel Flores Jaime Viegas

Year: 2016 Journal: MRS Advances Vol: 1 (4)Pages: 281-285 Publisher: Springer Science+Business Media

DOI: 10.1557/adv.2016.67

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Keywords:

Materials science Thin-film transistor Optoelectronics Wafer Threshold voltage Oxide Indium Electrode Doping Molybdenum Layer (electronics) Silicon Transistor Analytical Chemistry (journal) Nanotechnology Voltage Electrical engineering Metallurgy

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

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