Dielectric Constants of Deposited BaTiO₃ Thin Films

Abstract

Thin films of BaTiO 3 were deposited on a platinum substrate using a tungsten heater as the evaporation source, and the characteristics of the films were found to vary with the deposition conditions. The films with the most favorable characteristics, including a high dielectric constant, were obtained at a substrate temperature of 1000°C and a heat-treatment temperature of 1000°C or greater. Films with substrate temperatures between 600°C and 800°C can be used in making memory elements.