Opto-electronic properties of co-deposited mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

J. Kakalios; Uwe Kortshagen; C. Blackwell; C. Anderson; Y. Adjallah; L. R. Wienkes; Kent Bodurtha; J. Trask

doi:10.1557/opl.2011.936

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Opto-electronic properties of co-deposited mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

J. Kakalios Uwe Kortshagen C. Blackwell C. Anderson Y. Adjallah L. R. Wienkes Kent Bodurtha J. Trask

Year: 2011 Journal: MRS Proceedings Vol: 1321 Publisher: Cambridge University Press

DOI: 10.1557/opl.2011.936

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Keywords:

Materials science Nanocrystalline material Thin film Raman spectroscopy Nanocrystalline silicon Amorphous solid Semiconductor Analytical Chemistry (journal) Silicon Nanotechnology Amorphous silicon Optoelectronics Crystallography Crystalline silicon Optics

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Opto-electronic properties of co-deposited mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

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