Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition

Abstract

Hydrogenated amorphous silicon carbide thin films (a-SiC: H) were deposited by decomposition of SiH 4 and CH 4 gas mixtures at 200 0 C. Chemical bonding configuration measurements by Fourier transform infrared absorption spectroscopy show that there are SiH n (n=1,2,3), C-SiH, non-hydrogen Si-C, Si-CH 3 , and CH n (n=1,2,3) radicals in the as-grown sample.Raman scattering measurement reveals a broad peak located at about 479.4 cm -1 and a weak protuberance at 970.6 cm -1 .These demonstrate that there aren't any crystalline nanoparticles and the sample is in amorphous feature.