Fabrication of Polycrystalline Si1−xGex Films on Oxide for Thin-Film Transistors

Julie A. Tsai; Andrew J. Tang; R. Reif

doi:10.1557/proc-343-679

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Fabrication of Polycrystalline Si_1−xGe_x Films on Oxide for Thin-Film Transistors

Julie A. Tsai Andrew J. Tang R. Reif

Year: 1994 Journal: MRS Proceedings Vol: 343 Publisher: Cambridge University Press

DOI: 10.1557/proc-343-679

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Keywords:

Materials science Crystallite Crystallization Amorphous solid Recrystallization (geology) Oxide Grain size Annealing (glass) Thin film Crystallography Analytical Chemistry (journal) Chemical engineering Nanotechnology Composite material Metallurgy

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Fabrication of Polycrystalline Si_1−xGe_x Films on Oxide for Thin-Film Transistors

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