Interface roughness correlations in Ge/Si/Si1−xGexquantum well heterostructures

Yuichi Yamaguchi; P. M. Reimer; J. H. Li; Osami Sakata; Hidetoshi Hashizume

doi:10.1107/s0108767396080816

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Interface roughness correlations in Ge/Si/Si_1−xGe_xquantum well heterostructures

Yuichi Yamaguchi P. M. Reimer J. H. Li Osami Sakata Hidetoshi Hashizume

Year: 1996 Journal: Acta Crystallographica Section A Foundations of Crystallography Vol: 52 (a1)Pages: C468-C468 Publisher: Wiley

DOI: 10.1107/s0108767396080816

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Keywords:

Heterojunction Germanium Silicon Interface (matter) Materials science Surface finish Condensed matter physics Physics Optoelectronics

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Interface roughness correlations in Ge/Si/Si_1−xGe_xquantum well heterostructures

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