ADO-phosphonic acid self-assembled monolayer modified dielectrics for organic thin film transistors
Abstract
This study explores a strategy of using the phosphonic acid derivative (11-((12-(anthracen-2-yl)dodecyl)oxy)-11-oxoundecyl) phosphonic acid (ADO-phosphonic acid) as self-assembled monolayers (SAMs) on a Si/SiO2 surface to induce the crystallization of rubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm2/(Vs). It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology of rubrene to form a crystalline film in the thin-film transistors.
Metrics
Citation History
Topics
Related Documents
Thermal stability of organic thin-film transistors with self-assembled monolayer dielectrics
Kenjiro FukudaTomoyuki YokotaKazunori KuribaraTsuyoshi SekitaniUte ZschieschangHagen KlaukTakao Someya
Self-assembled monolayer modifications of organic thin film transistors
Ivan ShuvalovRhys LawsonHong MaAlex K.‐Y. JenLarry R. Dalton
Achieving Ultralow Turn-On Voltages in Organic Thin-Film Transistors: Investigating Fluoroalkylphosphonic Acid Self-Assembled Monolayer Hybrid Dielectrics
Rachana AcharyaBoyu PengPaddy K. L. ChanGuido SchmitzHagen Klauk
Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors
Ulrike KraftUte ZschieschangFrederik AnteDaniel KälbleinClaudia KamellaKonstantin AmsharovMartin JansenKlaus KernEdwin WeberHagen Klauk