Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma

J. S. HAN; J.P. McVittie

doi:10.1557/proc-389-197

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Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma

J. S. HAN J.P. McVittie

Year: 1995 Journal: MRS Proceedings Vol: 389 Publisher: Cambridge University Press

DOI: 10.1557/proc-389-197

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Keywords:

Materials science Deep reactive-ion etching Inductively coupled plasma Etching (microfabrication) Sputtering Trench Deposition (geology) Sticking probability Plasma Reactive-ion etching Analytical Chemistry (journal) Adsorption Composite material Nanotechnology Thin film Chemistry Desorption Layer (electronics) Chromatography

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma

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