A CMOS interdigital capacitive humidity sensor enhanced by a multi-layered structure

Abstract

This paper reports a novel interdigital capacitive humidity sensor enhanced by a multi-layered structure. Compared with a typical interdigital capacitive humidity sensor, both the sensitive capacitance and the sensitivity were enhanced by the improved structure. According to the test results the sensitivity and hysteresis of the humidity sensor is 10F/%RH and 3%RH respectively. The response time of the humidity senor is 15s.