Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature

Nobuhiro Hata; C.M. Fortmann; Akihisa Matsuda

doi:10.1557/proc-664-a12.6

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Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature

Nobuhiro Hata C.M. Fortmann Akihisa Matsuda

Year: 2001 Journal: MRS Proceedings Vol: 664 Publisher: Cambridge University Press

DOI: 10.1557/proc-664-a12.6

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Keywords:

Materials science Dangling bond Annealing (glass) Amorphous silicon Amorphous solid Saturation (graph theory) Silicon Relaxation (psychology) Optoelectronics Crystalline silicon Composite material Crystallography

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature

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