R.F. Sputtered Molybdenum Films

Abstract

Thin films of molybdenum have been R.F. sputter deposited on oxidized n-Si (III) slices with resistivity in the range of 3–6 ohm cm and 7059 glass plates. Study has been made of its resistivity, suitability for line patterning by sputter etching, adhesion to oxidized silicon slice and glass plates and stability. It has been confirmed that molybdenum gate in MOST is self-aligning like silicon gate, i.e. this can be applied before diffusion and then the gate material itself can be used as the diffusion mask. MOSFETs with low threshold have also been fabricated using molybdenum as gate material.