Photoluminescence Study of CuIn_1-xGa_xSe₂ Mixed Crystals

Abstract

Photoluminescence of CuIn 1- x Ga x Se 2 mixed crystals has been investigated. The emission band maximum shifts towards higher photon energies with increasing excitation intensity indicating the donor-acceptor recombination mechanism. The energies of the shallow defect states have been determined from the thermal quenching curves.