AlGaInN laser diode technology for systems applications

Abstract

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.