Low-temperature synthesis of carbon nitride by microwave plasma CVD

Abstract

Abstract Investigation of the low temperature synthesis of carbon nitride was carried out by microwave plasma CVD. Carbon nitride was synthesized using an improved microwave plasma CVD apparatus. Si was used as the substrate. A mixture of CH 4 and N 2 gas was used as a reaction gas. Synthesis pressure was varied from 1.1 to 4.0 kPa, microwave power was varied from 400 to 800 W. Faceted particles were obtained at a microwave power of 800 W and a substrate temperature of 880 K. Faceted particles were obtained at various synthesis pressures and a substrate temperature of as low as 740 K. Also, β-Si 3 N 4 and α-C 3 N 4 peaks were observed in the X-ray diffraction (XRD) pattern. As a result of studies of the low-temperature synthesis of carbon nitride by microwave plasma CVD, the morphology of deposits was found to depend on substrate temperature, and faceted particles were obtained at a substrate temperature as low as 740 K.