JOURNAL ARTICLE

Dielectric Properties of Bi<sub>0.2</sub>K<sub>0.8</sub>(Zn<sub>0.1</sub>Ti<sub>0.1</sub>)Ta<sub>0.8</sub>O<sub>3</sub> Ceramics

Abstract

The Bi0.2K0.8(Zn0.1Ti0.1)Ta0.8O3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 oC for undoped Bi0.2K0.8(Zn0.1Ti0.1)Ta0.8O3 and sintered at 1100 oC for Li doped one. The dielectric properties indicate the diffused phase transition (DPT). The dielectric loss of undoped ceramic increases with increasing frequency in temperature range 270 oC down to -150 oC, which suggests low temperature relaxation, while the dielectric loss of Li doped ceramic reveals the interesting lower value over a wide temperature range of about 0 - 300 oC.

Keywords:
Materials science Dielectric Ceramic Perovskite (structure) Analytical Chemistry (journal) Dielectric loss Doping Atmospheric temperature range Phase (matter) Mineralogy Crystallography Metallurgy Thermodynamics Optoelectronics Chemistry

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Topics

Ferroelectric and Piezoelectric Materials
Physical Sciences →  Materials Science →  Materials Chemistry
Microwave Dielectric Ceramics Synthesis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Multiferroics and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

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