Resistive Switching Behavior in Pt/La&lt;sub&gt;0.7&lt;/sub&gt;Sr&lt;sub&gt;0.3&lt;/sub&gt;MnO&lt;sub&gt;3&lt;/sub&gt;/Nb&lt;sub&gt;0.05&lt;/sub&gt;Bi&lt;sub&gt;0.95&lt;/sub&gt;FeO&lt;sub&gt;3&lt;/sub&gt;/Nb:SrTiO&lt;sub&gt;3&lt;/sub&gt; Ferroelectric Heterostructure

Yong Dan Zhu; Cheng Hu; An You Zuo

doi:10.4028/www.scientific.net/amr.1061-1062.333

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Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

Yong Dan Zhu Cheng Hu An You Zuo

Year: 2014 Journal: Advanced materials research Vol: 1061-1062 Pages: 333-336 Publisher: Trans Tech Publications

DOI: 10.4028/www.scientific.net/amr.1061-1062.333

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Abstract

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La 0.7 Sr 0.3 MnO 3 /Nb 0.05 Bi 0.95 FeO 3 /Nb:SrTiO 3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

Keywords:

Ferroelectricity Materials science Heterojunction Pulsed laser deposition Optoelectronics Semiconductor Resistive touchscreen Polarization (electrochemistry) Electrical engineering Thin film Nanotechnology Chemistry Dielectric

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Multiferroics and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Magnetic and transport properties of perovskites and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Resistive Switching Behavior in Pt/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/Nb<sub>0.05</sub>Bi<sub>0.95</sub>FeO<sub>3</sub>/Nb:SrTiO<sub>3</sub> Ferroelectric Heterostructure

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