JOURNAL ARTICLE

Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

Shinji NakagomiTaka-aki SatoYusuke TakahashiYoshihiro Kokubun

Year: 2015 Journal:   Sensors and Actuators A Physical Vol: 232 Pages: 208-213   Publisher: Elsevier BV
Keywords:
Photodiode Responsivity Optoelectronics Materials science Heterojunction Ultraviolet Gallium nitride Layer (electronics) Optics Photodetector Nanotechnology Physics

Metrics

108
Cited By
2.28
FWCI (Field Weighted Citation Impact)
14
Refs
0.89
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Advanced Photocatalysis Techniques
Physical Sciences →  Energy →  Renewable Energy, Sustainability and the Environment
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