Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

Shinji Nakagomi; Taka-aki Sato; Yusuke Takahashi; Yoshihiro Kokubun

doi:10.1016/j.sna.2015.06.011

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Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

Shinji Nakagomi Taka-aki Sato Yusuke Takahashi Yoshihiro Kokubun

Year: 2015 Journal: Sensors and Actuators A Physical Vol: 232 Pages: 208-213 Publisher: Elsevier BV

DOI: 10.1016/j.sna.2015.06.011

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Keywords:

Photodiode Responsivity Optoelectronics Materials science Heterojunction Ultraviolet Gallium nitride Layer (electronics) Optics Photodetector Nanotechnology Physics

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

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