Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application

Abstract

Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a\n potential candidate to replace conventional MOSFET, as it introduces new\n direction for transistor scaling. In this work, the sensitivity of process\n parameters like channel length (Lg), channel thickness (tSi), and gate work\n function (φM) on various performance metrics of undoped single material (SM)\n and double material (DM) cylindrical GAA (CGAA) to nanowire MOSFET are\n systematically analyzed. The electrical characteristics such as on current\n (Ion), subthreshold leakage current (Ioff), the threshold voltage (Vth) and\n transconductance (gm) are evaluated and studied with the variation of device\n design parameters. The discussion gives the direction towards low standby\n operating power (LSTP) devices as improvement in Ioff is approaching 90% in\n nanowire MOSFETs. All the device performances of undoped SM and DM CGAA\n MOSFETs are investigated through Sentaurus device simulator from Synopsys\n Inc.