Photoconductivity Stability Improvement in Hydrogenated Amorphous Silicon by Ultraviolet Illumination

Howard M. Branz; Yueqin Xu; Stephan Heck; Qi Wang; Wei Gao; Richard S. Crandall; Brent P. Nelson

doi:10.1557/proc-715-a19.11

ScienceGate Book Chapters

JOURNAL ARTICLE

Photoconductivity Stability Improvement in Hydrogenated Amorphous Silicon by Ultraviolet Illumination

Howard M. Branz Yueqin Xu Stephan Heck Qi Wang Wei Gao Richard S. Crandall Brent P. Nelson

Year: 2002 Journal: MRS Proceedings Vol: 715 Publisher: Cambridge University Press

DOI: 10.1557/proc-715-a19.11

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Photoconductivity Photocurrent Photosensitivity Ultraviolet Optoelectronics Amorphous silicon Amorphous solid Ultraviolet light Silicon Optics Crystalline silicon Chemistry

Metrics

Cited By

0.31

FWCI (Field Weighted Citation Impact)

Refs

0.63

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photovoltaic System Optimization Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

Photoconductivity Stability Improvement in Hydrogenated Amorphous Silicon by Ultraviolet Illumination

Metrics

Topics

Related Documents

Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

Slow Degradation of Hydrogenated Amorphous Silicon Photoconductivity Under Pulsed Illumination

Photoconductivity of hydrogenated amorphous silicon

Photoconductivity in Hydrogenated Amorphous Silicon

Photoconductivity spectroscopy of hydrogenated amorphous silicon